NbFeSb-based half-Heusler thermoelectric device with high stable W diffusion barrier layer

WANG Lei; SONG Qingfeng; LIAO Jincheng; BAI Shengqiang; CHEN Lidong

doi:10.3969/j.issn.1002-087X.2024.03.027

WANG Lei, SONG Qingfeng, LIAO Jincheng, BAI Shengqiang, CHEN Lidong

Chinese Journal of Power Sources ›› 2024, Vol. 48 ›› Issue (3) : 519-526.

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Chinese Journal of Power Sources ›› 2024, Vol. 48 ›› Issue (3) : 519-526. DOI: 10.3969/j.issn.1002-087X.2024.03.027

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NbFeSb-based half-Heusler thermoelectric device with high stable W diffusion barrier layer

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2024, 48(3): 519-526 https://doi.org/10.3969/j.issn.1002-087X.2024.03.027

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Received	Published
2023-12-26	2024-03-20
Issue Date
2024-09-30

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